The FDB14N30 is a 300V N-Channel MOSFET from Fairchild Semiconductor (now ON Semiconductor). It is designed for high-efficiency switching applications, offering low on-resistance and gate charge for improved performance. It is particularly well-suited for applications where minimizing power losses is crucial.

Applications

• Switch Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• DC-DC Converters
• Motor Control
• Lighting Ballasts
• Power Inverters

Features

• Low On-Resistance: Reduces conduction losses, enhancing efficiency.
• Low Gate Charge: Minimizes switching losses, improving efficiency at high frequencies.
• High Avalanche Energy: Provides robustness against voltage transients.
• Fast Switching Speed: Enables efficient operation in high-frequency applications.
• RoHS Compliant: Environmentally friendly and compliant with regulations.
• TO-263 Package: Suitable for surface mount applications with good thermal performance.

Benefits

• Increased Efficiency: Lower on-resistance and gate charge contribute to higher overall efficiency in power conversion applications.
• Improved Reliability: High avalanche energy ensures robust operation under voltage stress.
• Reduced Heat Dissipation: Lower power losses result in less heat generation, simplifying thermal management.
• Simplified Design: Easier to implement in power supply designs due to its predictable characteristics.
• Compliance: RoHS compliance ensures adherence to environmental regulations.

Additional Details

The FDB14N30 has a drain-source voltage (VDS) rating of 300V and a continuous drain current (ID) of 14A (at Tc = 25°C). It features a low typical on-resistance (RDS(on)), contributing to its efficiency. The device is supplied in a TO-263 package designed for surface mounting to a PCB. The gate threshold voltage (VGS(th)) is typically around 3V. The fast switching speed and low gate charge (Qg) contribute to reduced switching losses at high frequencies. The TO-263 package provides good thermal conductivity, allowing for efficient heat dissipation. This MOSFET is suitable for applications where high efficiency, reliability, and thermal performance are required. The device is designed to operate over a wide temperature range. The internal gate resistance is optimized for fast switching and reduced EMI. The avalanche ruggedness is an important parameter for inductive load switching applications.