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Same model may have multiple batches, images only for reference.
FDB2532_F085 Real Image
Same model may have multiple batches, images only for reference.

FDB2532_F085

Part No FDB2532_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 79A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 107nC @ 10V
Max Input Capacitance 5870pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037965-FDB2532_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDB2532_F085 CAD Model

Description

The Fairchild/ON Semiconductor FDB2532_F085 MOSFET is an N-channel polarity transistor with a drain-source breakdown voltage of 150V and a continuous drain current of 79A at 25°C.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current at 25°C: 79A
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 107nC @ 10V
  • Package: D2PAK (TO-263AB)
  • Category: Discrete Semiconductor Products
  • Production Status: Active
  • Popularity: Medium
  • Supply and Demand: Sufficient

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