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Same model may have multiple batches, images only for reference.
FDB2670 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDB2670

Part No FDB2670
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 19A TO-263AB
Datasheet
FDB2670 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1320pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 93W (Tc)
Maximum Rds On at Id,Vgs 130 mOhm @ 10A, 10V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037967-FDB2670
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDB2670 CAD Model

Description

The Fairchild/ON Semiconductor FDB2670 is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 19A @ 25°C
  • Maximum Rds on: 130 mOhm @ 10A and 10V
  • Maximum Gate Charge: 38nC @ 10V
  • Drive Voltage: 10V
  • Power Dissipation: 93W (Tc)
  • Package: D2PAK (TO-263AB)
  • Temperature Range: -65°C to 175°C (TJ)
  • Status: now obsolete

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54+ $2.1600 $116.6400
83+ $2.0924 $173.6692
115+ $2.0249 $232.8635
148+ $1.9575 $289.7100
198+ $1.7549 $347.4702
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Availability: 65,400 pieces
MOQ: 22 pcs
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