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FDB33N25TM

Part No FDB33N25TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 33A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 2135pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 235W (Tc)
Maximum Rds On at Id,Vgs 94 mOhm @ 16.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037969-FDB33N25TM
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDB33N25TM CAD Model

Description

Semiconductor FDB33N25M is an n-channel polarity product of MOSFET technology. This is an active part of the supply and demand balance, with 30% of false threats in the open market. The part number of Yingyuan is 1037969-fdb33n25tm, which comes from a D2 Pakistan (to 263AB) package. This product has a discharge source breakdown voltage of 250V and a continuous discharge current of 33A (TC) at 25 ℃. The maximum RDS on IDS has an average value of 94 MOM, 16.5a, and 10V. The manufacturer's homepage is www. Fairchatham. com.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8254 $53.6510
130+ $0.7732 $100.5160
205+ $0.7471 $153.1555
290+ $0.6948 $201.4920
375+ $0.6687 $250.7625
470+ $0.6426 $302.0220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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