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Same model may have multiple batches, images only for reference.
FDB8442_F085 Real Image
Same model may have multiple batches, images only for reference.

FDB8442_F085

Part No FDB8442_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 28A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 28A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 235nC @ 10V
Max Input Capacitance 12200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 254W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 001106-FDB8442_F085
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDB8442_F085 CAD Model

Description

Overview

The FDB8442_F085 is a robust N-Channel MOSFET specially designed for harsh environments, providing reliable operation with its superior thermal and electrical characteristics.

Key Features

  • Wide temperature tolerance
  • Strong noise immunity
  • Superior switching efficiency

Benefits

  • Ideal for rugged and industrial applications
  • Consistent performance in challenging conditions
  • Increases operational effectiveness

Applications

  • Automotive Electronics
  • Industrial Power Modules
  • Telecommunication Systems

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