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FDB86102LZ

Part No FDB86102LZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 30A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8.3A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 1275pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta)
Maximum Rds On at Id,Vgs 24 mOhm @ 8.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 066914-FDB86102LZ
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDB86102LZ CAD Model

Description

Description

The FDB86102LZ MOSFET offers top-tier efficiency and robustness, engineered to accommodate high-voltage applications and rapid switching while maintaining reliability.

Features

  • High voltage tolerance
  • Superior switching performance
  • Enhanced durability

Benefits

  • Supports high-voltage operations
  • Maintains consistent performance
  • Long-lasting operational life

Applications

  • High-voltage power supplies
  • Industrial automation
  • Electric vehicle systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6276 $56.9660
75+ $1.3355 $100.1625
120+ $1.2938 $155.2560
160+ $1.2520 $200.3200
210+ $1.2103 $254.1630
280+ $1.0851 $303.8280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 500 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
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