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FDC6392S

Part No FDC6392S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.2A SSOT-6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 5.2nC @ 4.5V
Max Input Capacitance 369pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 960mW (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 2.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-6
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 015918-FDC6392S
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDC6392S CAD Model

Description

FDC6392S MOSFET Transistor

The FDC6392S is a versatile N-channel MOSFET transistor designed for a wide range of electronic applications. Known for its low on-resistance and fast switching capabilities, this component is ideal for efficient power management in various circuits.

Applications

  • Battery management systems
  • DC-DC converters
  • Motor control applications

Features and Benefits

  • Low on-resistance of 28mΩ for efficient power handling
  • Fast switching speed for improved performance
  • Compact SOIC-8 package suitable for space-constrained designs

Additional Details

This MOSFET is designed to handle continuous drain currents up to 3.1A, making it suitable for medium power applications. Its robust construction ensures reliable operation in challenging environments.

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