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FDP2532 Real Image FDP2532 Real Image
Same model may have multiple batches, images only for reference.
FDP2532 Real Image FDP2532 Real Image
FDP2532 Real Image FDP2532 Real Image
Same model may have multiple batches, images only for reference.

FDP2532

Part No FDP2532
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 79A TO-220AB
Datasheet
FDP2532 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 8A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 107nC @ 10V
Max Input Capacitance 5870pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 088782-FDP2532
Family Name FDP2532
Introduction Date June 20, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP2532 CAD Model

Description

The FDP2532 is a N-Channel MOSFET manufactured by Fairchild/ON Semiconductor. It has a maximum drain-source breakdown voltage of 150V and a continuous drain current of 8A (Ta), 79A (Tc). The MOSFET is sold in a TO-220-3 package.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 8A (Ta), 79A (Tc)
  • Package: TO-220-3

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81+ $1.8647 $151.0407
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192+ $1.5640 $300.2880
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