FDC6401N N-Channel PowerTrench MOSFET
The FDC6401N is a high-performance N-channel PowerTrench MOSFET, designed to offer excellent efficiency in power-sensitive applications. With its advanced trench technology, it provides minimized power loss and thermal resistance.
Applications
- Load switch applications
- Power supply circuits
- Switching regulators
Features and Benefits
- Enhanced thermal performance with low RDS(on)
- Capable of handling significant pulsed currents up to 12A
- Compact packaging for optimized board design
Additional Details
Engineered for efficiency, the FDC6401N supports a maximum drain-source voltage of 20V, making it suitable for a variety of power systems.