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FDC855N

Part No FDC855N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.1A 6-SSOT
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 655pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 27 mOhm @ 6.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-6
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 015931-FDC855N
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDC855N CAD Model

Description

FDC855N N-Channel MOSFET

Engineered for high-performance and unmatched reliability, the FDC855N N-Channel MOSFET is ideal for applications requiring a compact and efficient power management solution.

  • Applications/Projects:
    • Motor control circuits
    • Power supply management
    • Load switch implementation
  • Features and Benefits:
    • Superb thermal performance
    • Enhanced gate charge efficiency
    • Compact footprint suitable for PCB integration
  • Additional Details:
    • Voltage rating: 30V
    • Current capacity: 7.5A
    • Compliant with international safety standards

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2328 $50.0520
525+ $0.1911 $100.3275
815+ $0.1851 $150.8565
1,120+ $0.1791 $200.5920
1,445+ $0.1732 $250.2740
1,935+ $0.1552 $300.3120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,781 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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