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FDD6030BL

Part No FDD6030BL
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series PowerTrench®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1143 pF @ 15 V
Power Dissipation (Max) 1.6W (Ta), 50W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 129107-FDD6030BL
Ultra Librarian 3D Model Ultra Librarian FDD6030BL CAD Model

Description

FDD6030BL

The FDD6030BL is a high-efficiency, low-on-resistance N-channel MOSFET that provides remarkable performance for power-intensive applications. It renders a maximum drain-source voltage of 30V and supports a continuous drain current of 60A.

  • DC-AC inverters
  • Electric vehicles
  • High-frequency synchronous rectification

Features and Benefits:

  • Exceptional current handling: Facilitates high current flow with minimal power loss.
  • Rapid switching abilities: Improves system efficiency in high-frequency operations.
  • Low gate charge: Reduces power consumption, enhancing energy savings.

The device is encapsulated in a TO-220 package, providing ideal thermal management and operational reliability.

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