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FDD8453LZ

Part No FDD8453LZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 16.4A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 16.4A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 3515pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 65W (Tc)
Maximum Rds On at Id,Vgs 6.7 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038116-FDD8453LZ
Popularity Medium
Supply and Demand Status Limited
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDD8453LZ CAD Model

Description

The Fairchild/ON Semiconductor FDD8453LZ is an N-channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 16.4A (Ta) and 50A (Tc) at 25 degrees Celsius.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 16.4A (Ta) and 50A (Tc) @ 25 degrees Celsius
  • Maximum Power Dissipation: 3.1W (Ta) and 65W (Tc)
  • Mounting: SMD (SMT)
  • Packaging: D-PAK (TO-252AA)
  • Maximum Rds On: 6.7 mOhm @ 15A and 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 64nC @ 10V
  • Supply and Demand Status: Limited
  • Pieces per Package: 2,500

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1142 $50.1390
110+ $0.9143 $100.5730
170+ $0.8857 $150.5690
235+ $0.8571 $201.4185
305+ $0.8286 $252.7230
405+ $0.7428 $300.8340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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