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FDD8874

Part No FDD8874
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 116A D-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 18A (Ta), 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 2990pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 5.1 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 066948-FDD8874
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDD8874 CAD Model

Description

FDD8874 MOSFET Overview

The FDD8874 is a high-efficiency n-channel MOSFET designed for a wide range of power management applications. It features low on-resistance and high-speed switching capabilities, making it ideal for demanding electronic projects.

  • Applications:
    • DC-DC converters
    • Load switch circuits
    • Motor control systems
  • Features and Benefits:
    • Low on-state resistance for enhanced efficiency
    • High-speed switching capability
    • Robust construction for reliable performance
  • Additional Details:
    • Maximum drain current: 50A
    • Drain-source voltage: 30V
    • Package type: TO-252

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2467 $62.3350
100+ $1.1663 $116.6300
155+ $1.1261 $174.5455
225+ $1.0457 $235.2825
290+ $1.0055 $291.5950
360+ $0.9653 $347.5080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,340 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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