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Same model may have multiple batches, images only for reference.
FDFS6N303 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDFS6N303

Part No FDFS6N303
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6A 8-SOIC
Datasheet
FDFS6N303 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 350pF @ 15V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 900mW (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 112242-FDFS6N303
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDFS6N303 CAD Model

Description

FDFS6N303

The FDFS6N303 is an N-channel MOSFET capable of operating at voltages up to 30V with a continuous drain current of 12A, making it ideal for high-power applications requiring reliable switching performance.

Features and Benefits:

  • Exceptional current-carrying capacity.
  • Low RDS(on) for minimized conduction losses.
  • Fast switching speed suitable for dynamic use cases.

Applications:

  • Switch-mode power supplies.
  • Motor control systems.
  • Telecommunications equipment.

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