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Same model may have multiple batches, images only for reference.
FDG315N Real Image
Same model may have multiple batches, images only for reference.

FDG315N

Part No FDG315N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 2A 6-Pin SC-88 T/R / MOSFET N-CH 30V 2A SC70-6
Datasheet
FDG315N Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 4nC @ 5V
Max Input Capacitance 220pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 120 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 015978-FDG315N
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Family Name FDG315N
Introduction Date September 18, 2000
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2021
Ultra Librarian 3D Model Ultra Librarian FDG315N CAD Model

Description

The FDG315N is a high popularity N-Channel MOSFET from Fairchild/ON Semiconductor with sufficient supply and demand.

  • Power Dissipation: 750mW (Ta)
  • Continuous Drain Current: 2A (Ta) @ 25°C
  • Package: SC-70-6
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3267 $50.6385
375+ $0.2681 $100.5375
580+ $0.2597 $150.6260
800+ $0.2514 $201.1200
1,030+ $0.2430 $250.2900
1,380+ $0.2178 $300.5640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,148 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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