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Same model may have multiple batches, images only for reference.
FDG410NZ Real Image
Same model may have multiple batches, images only for reference.

FDG410NZ

Part No FDG410NZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.2A SC70-6
Datasheet
FDG410NZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 7.2nC @ 4.5V
Max Input Capacitance 535pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 420mW (Ta)
Maximum Rds On at Id,Vgs 70 mOhm @ 2.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1038141-FDG410NZ
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDG410NZ CAD Model

Description

The Fairchild/ON Semiconductor FDG410NZ is a N-Channel MOSFET that comes in a SC-70-6 package.

  • Manufacturer: Fairchild/ON Semiconductor
  • Channel Type: N-Channel
  • Package: SC-70-6
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2.2A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 7.2nC @ 4.5V
  • Maximum Rds On: 70 mOhm @ 2.2A, 4.5V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Power Dissipation (Max): 420mW (Ta)
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 1.5V, 4.5V

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