The FDG6320C MOSFET is a N and P-channel, surface mount device manufactured by Fairchild/ON Semiconductor. It features a logic level gate and is designed for use in discrete semiconductor products.

• Drain-Source Breakdown Voltage: 25V
• Continuous Drain Current: 220mA, 140mA @ 25°C
• Package: SC-70-6
• Power Dissipation: 300mW (Max)
• Drive Voltage: 1.5V @ 250μA
• Rds On: 4 Ohm @ 220mA, 4.5V (Max)
• Quantity per Package: 3k pcs

It is suitable for use in a variety of applications, including power management and industrial applications.