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Same model may have multiple batches, images only for reference.
FDH038AN08A1 Real Image
Same model may have multiple batches, images only for reference.

FDH038AN08A1

Part No FDH038AN08A1
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 80A TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 22A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 160nC @ 10V
Max Input Capacitance 8665pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 450W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 066959-FDH038AN08A1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian FDH038AN08A1 CAD Model

Description

The Fairchild/ON Semiconductor FDH038AN08A1 is an N-channel MOSFET with a drain-source breakdown voltage of 75V.

  • Drain-Source Breakdown Voltage: 75V
  • Power Dissipation: 450W (Tc)
  • Continuous Drain Current: 22A (Ta), 80A (Tc) @ 25°C
  • Maximum Rds On: 3.8 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 160nC @ 10V
  • Maximum Input Capacitance: 8665pF @ 25V
  • Package: TO-247
  • Operating Temperature: -55°C to 175°C (TJ)
  • Application: Discrete semiconductor products

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50+ $6.1176 $305.8800
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Availability: 10,000 pieces
MOQ: 6 pcs
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