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FDH3632

Part No FDH3632
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 6000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 066961-FDH3632
Popularity Medium
Supply and Demand Status Balance
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian FDH3632 CAD Model

Description

The Fairchild/ON Semiconductor 066961-FDH3632 is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Channel Type: N-Channel
  • Power Dissipation: 310W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (25°C): 12A (Ta), 80A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Rds On (Max): 9 mOhm @ 80A, 10V
  • Package: TO-247
  • Dimension: TO-247-3
  • Temperature Range: -55°C to 175°C (TJ)
  • Mounting Type: Through-hole
  • Quantity per Package: 450
  • Application: Power distribution switches and load drivers

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1769 $58.8450
120+ $0.9656 $115.8720
190+ $0.9356 $177.7640
260+ $0.9055 $235.4300
330+ $0.8755 $288.9150
445+ $0.7854 $349.5030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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