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Same model may have multiple batches, images only for reference.
FDM3300NZ Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDM3300NZ

Part No FDM3300NZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 10A MCRFET
Datasheet
FDM3300NZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10A
Maximum Rds On at Id,Vgs 23 mOhm @ 10A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1610pF @ 10V
Maximum Power Dissipation 900mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power33
Win Source Part Number 066972-FDM3300NZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDM3300NZ CAD Model

Description

The Fairchild/ON Semiconductor FDM3300NZ is a dual N-channel logic level gate FET designed for use in discrete semiconductor products.

  • Power Dissipation: 900mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: Up to 10A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Rds On: 23 mOhm @ 10A, 4.5V
  • Packaging: Reel
  • Mounting: Surface Mountable
  • Supply and Demand: Balanced

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