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Same model may have multiple batches, images only for reference.
FDM3622 Real Image
Same model may have multiple batches, images only for reference.

FDM3622

Part No FDM3622
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4.4A 8MLP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 1090pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 4.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-MLP (3.3x3.3)
Dimension 8-PowerWDFN
Win Source Part Number 016001-FDM3622
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDM3622 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is an N-Channel polarity transistor.

  • Maximum Power Dissipation: 2.1W (Ta)
  • Drive Voltage: 6V (Max Rds On), 10V (Min Rds On)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 4.4A (Ta) @ 25°C
  • Package: 8-MLP (3.3x3.3)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 17nC @ 10V
  • Maximum Rds On: 60 mOhm @ 4.4A, 10V
  • Packaging: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,095 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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