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FDMC89521L

Part No FDMC89521L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 8.2A POWER33
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 8.2A
Maximum Rds On at Id,Vgs 17 mOhm @ 8.2A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1635pF @ 30V
Maximum Power Dissipation 800mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-Power33 (3x3)
Win Source Part Number 1038214-FDMC89521L
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name FDMC89521L
ECCN EAR99
Country of Origin Thailand
Halogen Free Compliant
Estimated EOL Date 2026
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMC89521L CAD Model

Description

The Fairchild/ON Semiconductor FDMC89521L is a dual N-channel asymmetrical FET with a logic level gate.

  • Package: 8-Power33 (3x3)
  • Temperature Range: -55°C to 150°C
  • Power Dissipation: 800mW
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 8.2A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge: 24nC @ 10V
  • Maximum Rds On @ Id,Vgs: 17 mOhm @ 8.2A, 10V
  • Supply and Demand: Balanced
  • Package Quantity: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0223 $50.5575
61+ $1.6593 $101.2173
94+ $1.6075 $151.1050
129+ $1.5556 $200.6724
167+ $1.5038 $251.1346
223+ $1.3482 $300.6486
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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