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Same model may have multiple batches, images only for reference.
FDMS3600AS Real Image
Same model may have multiple batches, images only for reference.

FDMS3600AS

Part No FDMS3600AS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 15A/30A 8-PQFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 15A, 30A
Maximum Rds On at Id,Vgs 5.6 mOhm @ 15A, 10V
Gate-Source Threshold Voltage 2.7V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 1770pF @ 13V
Maximum Power Dissipation 2.2W, 2.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power56
Win Source Part Number 066991-FDMS3600AS
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS3600AS CAD Model

Description

The FDMS3600AS from Fairchild/ON Semiconductor is a dual asymmetrical N-channel logic level gate FET for discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: Up to 30A
  • Power Dissipation: 2.2W
  • Package: Power56
  • Popularity: Medium
  • Supply and Demand: Balanced
  • Packaging: 3,000 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1956 $59.7800
120+ $0.9811 $117.7320
185+ $0.9503 $175.8055
255+ $0.9198 $234.5490
325+ $0.8890 $288.9250
435+ $0.7971 $346.7385
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,500 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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