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Same model may have multiple batches, images only for reference.
FDMS3610S Real Image
Same model may have multiple batches, images only for reference.

FDMS3610S

Part No FDMS3610S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 17.5A/30A 8-MLP
Datasheet
FDMS3610S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 17.5A, 30A
Maximum Rds On at Id,Vgs 5 mOhm @ 17.5A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1570pF @ 13V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power56
Win Source Part Number 1038235-FDMS3610S
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS3610S CAD Model

Description

The Fairchild/ON Semiconductor FDMS3610S is a 2 N-Channel (Dual) Asymmetrical FET with a logic-level gate.

  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current @ 25°C: 17.5A, 30A
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 26nC @ 10V
  • Maximum Input Capacitance: 1570pF @ 13V
  • Maximum Rds On @ Id, Vgs: 5 mOhm @ 17.5A, 10V
  • Status: Active
  • Popularity: Medium
  • Package: Power56
  • Package Quantity: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8644 $60.5080
165+ $0.7093 $117.0345
255+ $0.6871 $175.2105
350+ $0.6650 $232.7500
450+ $0.6429 $289.3050
605+ $0.5763 $348.6615
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Availability: 4,420 pieces
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