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Same model may have multiple batches, images only for reference.
FDMS3620S Real Image
Same model may have multiple batches, images only for reference.

FDMS3620S

Part No FDMS3620S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 17.5A/38A 8PQFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 17.5A, 38A
Maximum Rds On at Id,Vgs 4.7 mOhm @ 17.5A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1570pF @ 13V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power56
Win Source Part Number 016064-FDMS3620S
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS3620S CAD Model

Description

The FDMS3620S is a dual N-channel asymmetrical FET manufactured by Fairchild/ON Semiconductor. Its supply and demand status is limited.

  • Product Type: FET
  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current (25°C): 17.5A / 38A
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 26nC @ 10V
  • Maximum Input Capacitance: 1570pF @ 13V
  • Maximum Rds On (Id, Vgs): 4.7 mOhm @ 17.5A, 10V

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Quantity Unit Price Ext. Price
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36+ $3.2825 $118.1700
55+ $3.1799 $174.8945
76+ $3.0774 $233.8824
98+ $2.9747 $291.5206
130+ $2.6670 $346.7100
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Availability: 25,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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