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FDMS8333L Real Image FDMS8333L Real Image
Same model may have multiple batches, images only for reference.
FDMS8333L Real Image FDMS8333L Real Image
FDMS8333L Real Image FDMS8333L Real Image
Same model may have multiple batches, images only for reference.

FDMS8333L

Part No FDMS8333L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 40V 22A POWER 56
Datasheet
FDMS8333L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 22A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 4545pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 3.1 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (5x6), Power56
Dimension 8-PowerTDFN
Win Source Part Number 1038251-FDMS8333L
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS8333L CAD Model

Description

The Fairchild/ON Semiconductor FDMS8333L is an N-channel MOSFET with a maximum power dissipation of 2.5W (Ta) and 69W (Tc).

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 22A (Ta) and 76A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Max Gate Charge: 64nC @ 10V
  • Maximum Input Capacitance: 4545pF @ 20V
  • Maximum Rds On at Id, Vgs: 3.1 mOhm @ 22A, 10V
  • Mounting: SMD (SMT)
  • Package: 8-PQFN (5x6), Power56
  • Dimension: 8-PowerTDFN.

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