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FDMS86103L

Part No FDMS86103L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 12A POWER56
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 3710pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (5x6), Power56
Dimension 8-PowerTDFN
Win Source Part Number 1038259-FDMS86103L
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS86103L CAD Model

Description

The 1038259-FDMS86103L from Fairchild/ON Semiconductor is an active MOSFET component that is designed for surface-mounting.

  • Maximum Power Dissipation: 2.5W (Ta), 104W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 12A (Ta), 49A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On @ Id,Vgs: 8 mOhm @ 12A, 10V
  • Package Quantity: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $1.9511 $50.7286
55+ $1.8252 $100.3860
86+ $1.7622 $151.5492
123+ $1.6364 $201.2772
159+ $1.5734 $250.1706
199+ $1.5105 $300.5895
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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