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SQM100N02-3M5L_GE3

Part No SQM100N02-3M5L_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 10 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SQM100
Other Names SQM100N02-3M5LGE3,SQM100N02-3M5L_GE3DKR,SQM100N02-3M5L_GE3TR,SQM100N02-3M5L_GE3CT,SQM100N02-3M5L_GE3,SQM100N02-3M5L GE3
Standard Package 800
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277849-SQM100N02-3M5L_GE3
Ultra Librarian 3D Model Ultra Librarian SQM100N02-3M5L_GE3 CAD Model

Description

The SQM100N02-3M5L_GE3 is an electronic component manufactured by Vishay Siliconix.

  • Component Type: MOSFET transistor
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Drain-to-Source Voltage (Vdss): 20 V
  • Current-Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V

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