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FDMS86310

Part No FDMS86310
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 80V 17A 8-Pin PQFN EP T/R / MOSFET N-CH 80V 17A 8-PQFN
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 17A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 6290pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 96W (Tc)
Maximum Rds On at Id,Vgs 4.8 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (5x6), Power56
Dimension 8-PowerTDFN
Win Source Part Number 1038267-FDMS86310
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 3k pcs
Family Name FDMS86310
Introduction Date January 30, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian FDMS86310 CAD Model

Description

The FDMS86310 is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Package: 8-PQFN (5x6), Power56
  • Operating Temperature: -55°C to 150°C (TJ)
  • Power Dissipation: 2.5W (Ta) and 96W (Tc)
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 17A (Ta) and 50A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 95nC @ 10V
  • Commonly Used In: Power Management Applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.6838 $50.5140
64+ $1.5772 $100.9408
99+ $1.5239 $150.8661
142+ $1.4174 $201.2708
184+ $1.3641 $250.9944
229+ $1.3108 $300.1732
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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