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Same model may have multiple batches, images only for reference.
FDN359BN_F095 Real Image
Same model may have multiple batches, images only for reference.

FDN359BN_F095

Part No FDN359BN_F095
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2.7A SSOT3
Datasheet
FDN359BN_F095 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 7nC @ 5V
Max Input Capacitance 650pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 46 mOhm @ 2.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 112732-FDN359BN_F095
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDN359BN_F095 CAD Model

Description

The FDN359BN_F095 is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor. It is a power MOSFET that is widely used in various applications as a discrete semiconductor product.

  • Channel Type: N-channel
  • Package: SuperSOT-3
  • Dimension: TO-236-3, SC-59, SOT-23-3
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 2.7A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 7nC @ 5V
  • Maximum Rds On: 46 mOhm @ 2.7A, 10V
  • Supply and Demand: Limited

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510+ $0.6805 $347.0550
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