The Fairchild/ON Semiconductor MOSFET is an N-Channel power transistor.

• Drain-Source Breakdown Voltage: 80V
• Continuous Drain Current: 120A @ 25°C
• Maximum Rds On: 3.9 mOhm @ 100A, 10V
• Gate-Source Threshold Voltage: 4.5V @ 250μA
• Maximum Gate Charge: 133nC @ 10V
• Maximum Input Capacitance: 9450pF @ 40V
• Maximum Gate-Source Voltage: ±20V
• Mounting Technology: Through-Hole
• Package: TO-220-3
• Temperature Range: -55°C to 175°C (TJ)
• Power Dissipation (Max): 214W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Supply and Demand: Balanced