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Same model may have multiple batches, images only for reference.
FDP12N60NZ Real Image
Same model may have multiple batches, images only for reference.

FDP12N60NZ

Part No FDP12N60NZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 1676pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 240W (Tc)
Maximum Rds On at Id,Vgs 650 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 204110-FDP12N60NZ
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FDP12N60NZ CAD Model

Description

The Fairchild/ON Semiconductor 204110-FDP12N60NZ is an N-Channel MOSFET.

  • Power Dissipation (Max): 240W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 12A (Tc)
  • Maximum Rds On: 650 mOhm @ 6A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 34nC @ 10V
  • Maximum Input Capacitance: 1676pF @ 25V
  • Package: TO-220-3
  • Operating Temperature: -55°C to 150°C (TJ)
  • Supply and Demand: Limited
  • Package Quantity: 1k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0490 $51.2250
60+ $1.6812 $100.8720
93+ $1.6287 $151.4691
127+ $1.5762 $200.1774
165+ $1.5236 $251.3940
220+ $1.3660 $300.5200
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Availability: 407 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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