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FDP15N65

Part No FDP15N65
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 3095pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 440 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 204112-FDP15N65
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDP15N65 CAD Model

Description

The FDP15N65 is a MOSFET transistor manufactured by Fairchild/ON Semiconductor. It is an N-channel polarity transistor with a maximum power dissipation of 250W (Tc). This transistor is a popular choice among electronic enthusiasts and is suitable for a wide range of applications. The FDP15N65 is obsolete (EOL) and is designed to operate in a temperature range of -55°C to 150°C (TJ). It is a through-hole mounting transistor with a TO-220-3 case/package.

  • Polarity: N-Channel
  • Maximum Power Dissipation: 250W (Tc)
  • Mounting Style: Through-Hole
  • Package: TO-220-3
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 440 mOhm @ 7.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1656 $64.9680
65+ $1.7775 $115.5375
105+ $1.7210 $180.7050
140+ $1.6655 $233.1700
180+ $1.6101 $289.8180
240+ $1.4438 $346.5120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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