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Same model may have multiple batches, images only for reference.
FDP3652 Real Image
Same model may have multiple batches, images only for reference.

FDP3652

Part No FDP3652
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 61A TO-220AB
Datasheet
FDP3652 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Bulk
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 53nC @ 10V
Max Input Capacitance 2880pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 61A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067019-FDP3652
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP3652 CAD Model

Description

The Fairchild/ON Semiconductor FDP3652 is an N-channel MOSFET transistor.

  • Maximum Power Dissipation: 150W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 9A (Ta) and 61A (Tc) at 25°C
  • Maximum Rds On at Id, Vgs: 16 mOhm at 61A, 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-220-3
  • Gate Charge: 53nC at 10V
  • Input Capacitance: 2880pF at 25V
  • Package Quantity: 800

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5354 $53.7390
70+ $1.4364 $100.5480
110+ $1.3869 $152.5590
160+ $1.2878 $206.0480
205+ $1.2383 $253.8515
255+ $1.1887 $303.1185
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,700 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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