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Same model may have multiple batches, images only for reference.
FDP79N15 Real Image
Same model may have multiple batches, images only for reference.

FDP79N15

Part No FDP79N15
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 79A TO-220
Datasheet
FDP79N15 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 73nC @ 10V
Max Input Capacitance 3410pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 463W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 39.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1038331-FDP79N15
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDP79N15 CAD Model

Description

The FDP79N15 is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 150V
  • Package: TO-220-3
  • Power Dissipation (max): 463W (Tc)
  • Drive Voltage: 10V (max Rds On, Min Rds On)
  • Temperature Range: -55°C to 150°C (TJ)
  • Dimension: TO-220-3
  • Mounting: Through-hole
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 73nC @ 10V
  • Maximum Input Capacitance: 3410pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 30 mOhm @ 39.5A, 10V
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL), sufficient supply

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