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Same model may have multiple batches, images only for reference.
FDP8874 Real Image
Same model may have multiple batches, images only for reference.

FDP8874

Part No FDP8874
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 114A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta), 114A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 3130pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 5.3 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 067035-FDP8874
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP8874 CAD Model

Description

The Fairchild/ON Semiconductor FDP8874 is an N-Channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 16A @ 25°C
  • Maximum Power Dissipation: 110W
  • Maximum Rds On: 5.3 mOhm @ 40A and 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 72nC @ 10V
  • Package: TO-220AB
  • Operating Temperature: -55°C to 175°C
  • Suitable for: Discrete semiconductor products
  • Popularity: Medium
  • Supply and Demand: Limited

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