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FDP8880

Part No FDP8880
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 54A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1240pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 55W (Tc)
Maximum Rds On at Id,Vgs 11.6 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 204120-FDP8880
Family Name FDP8880
Introduction Date February 07, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP8880 CAD Model

Description

The Fairchild/ON Semiconductor FDP8880 is an N-channel MOSFET designed for through-hole mounting.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 11A @ 25°C, 54A @ Tc
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Package: TO-220AB
  • Ideal for: Discrete semiconductor applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9755 $53.6525
110+ $0.9126 $100.3860
175+ $0.8811 $154.1925
245+ $0.8182 $200.4590
320+ $0.7867 $251.7440
400+ $0.7553 $302.1200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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