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Same model may have multiple batches, images only for reference.
FDPF680N10T Real Image
Same model may have multiple batches, images only for reference.

FDPF680N10T

Part No FDPF680N10T
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 12A TO-220F
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 1000pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 24W (Tc)
Maximum Rds On at Id,Vgs 68 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 040271-FDPF680N10T
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FDPF680N10T CAD Model

Description

The Fairchild/ON Semiconductor 040271-FDPF680N10T is an N-channel MOSFET.

  • Polarity: N-Channel
  • Maximum Power Dissipation: 24W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 12A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Gate-Source Voltage (Max): ±20V
  • Rds On (Max): 68 mOhm @ 6A, 10V
  • Package: TO-220F
  • Application: Discrete Semiconductor Products

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