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Same model may have multiple batches, images only for reference.
FDR836P Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDR836P

Part No FDR836P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series PowerTrench®
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 6.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 25 V
Power Dissipation (Max) 900mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-8
Package / Case 8-LSOP (0.130", 3.30mm Width)
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 591205-FDR836P
Ultra Librarian 3D Model Ultra Librarian FDR836P CAD Model

Description

The FDR836P is a P-Channel MOSFET transistor from the PowerTrench™ series.

  • Design: For use in various applications that require power management, such as consumer electronics and automotive systems.
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 6.1A @ 25°C
  • On-Resistance (Rds On): 30mOhm @ 6.1A and 4.5V
  • Package: 8-LSOP
  • Temperature Range: -55°C to 150°C
  • Status: Active
  • Manufacturer: Fairchild/ON Semiconductor
  • Choice: Reliable choice for power management applications that require a P-Channel MOSFET transistor.

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145+ $1.2171 $176.4795
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340+ $1.0208 $347.0720
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Availability: 9,900 pieces
MOQ: 7 pcs
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