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Same model may have multiple batches, images only for reference.
FDS3890 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDS3890

Part No FDS3890
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 80V 4.7A 8-SO
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 4.7A
Maximum Rds On at Id,Vgs 44 mOhm @ 4.7A, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1180pF @ 40V
Maximum Power Dissipation 900mW
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 016136-FDS3890
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS3890 CAD Model

Description

The Fairchild/ON Semiconductor FDS3890 is a dual N-channel FET with a logic level gate feature. It is suitable for use in various applications, including power management and is packaged in an 8-SO case. The supply and demand status is limited and the quantity per package is 2,500.

  • Maximum Power Dissipation: 900mW
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current (25°C): 4.7A
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On (Id,Vgs): 44 mOhm @ 4.7A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9000 $57.0000
65+ $1.5590 $101.3350
100+ $1.5103 $151.0300
140+ $1.4615 $204.6100
180+ $1.4128 $254.3040
240+ $1.2667 $304.0080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,498 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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