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FDS4070N3

Part No FDS4070N3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 15.3A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 15.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 67nC @ 10V
Max Input Capacitance 2819pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 15.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 116312-FDS4070N3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian FDS4070N3 CAD Model

Description

The Fairchild/ON Semiconductor FDS4070N3 is an N-Channel MOSFET with a maximum power dissipation of 3W (Ta). It comes in an 8-SOIC (0.154", 3.90mm Width) package and is suitable for industrial and power management applications in the open market. The supply and demand status is balanced.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current (25°C): 15.3A (Ta)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 67nC @ 10V
  • Maximum Input Capacitance: 2819pF @ 20V
  • Maximum Rds On (Id, Vgs): 7.5 mOhm @ 15.3A, 10V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3754 $58.1870
375+ $0.3081 $115.5375
585+ $0.2985 $174.6225
800+ $0.2888 $231.0400
1,035+ $0.2792 $288.9720
1,385+ $0.2503 $346.6655
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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