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Same model may have multiple batches, images only for reference.
FDS6609A Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDS6609A

Part No FDS6609A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 6.3A 8SOIC
Datasheet
FDS6609A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 930pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 32 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 067082-FDS6609A
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian FDS6609A CAD Model

Description

The Fairchild/ON Semiconductor 067082-FDS6609A is a P-Channel MOSFET designed for use in industrial power management applications.

  • Package: Reel - TR
  • Mounting Type: SMD (SMT)
  • Maximum Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 6.3A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 29nC @ 10V
  • Maximum Input Capacitance: 930pF @ 15V
  • Rds On (max): 32 mOhm @ 7A, 10V
  • Status: Obsolete (EOL)
  • Popularity: Medium

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