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Same model may have multiple batches, images only for reference.
FDS6670A Real Image
Same model may have multiple batches, images only for reference.

FDS6670A

Part No FDS6670A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13.5A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1540pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 9 mOhm @ 13.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 016158-FDS6670A
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS6670A CAD Model

Description

The FDS6670A is an N-channel MOSFET that is designed for use in power management and industrial applications. It features a low on-resistance and a high current rating, making it ideal for use in high-power circuits.

  • Package: 8-SO
  • Drain-Source Breakdown Voltage (Max): 30V
  • Continuous Drain Current: 13.5A
  • Gate-Source Threshold Voltage: 3V
  • Input Capacitance (Max): 1540pF
  • RoHS Compliant: Yes
  • Quantity per Package: 2,500 pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4647 $51.1170
230+ $0.4353 $100.1190
360+ $0.4206 $151.4160
515+ $0.3912 $201.4680
665+ $0.3765 $250.3725
830+ $0.3618 $300.2940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,500 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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