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Same model may have multiple batches, images only for reference.
FDS6612A Real Image
Same model may have multiple batches, images only for reference.

FDS6612A

Part No FDS6612A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.4A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 7.6nC @ 5V
Max Input Capacitance 560pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 016157-FDS6612A
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS6612A CAD Model

Description

The Fairchild/ON Semiconductor FDS6612A is an N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 8.4A at 25°C. It is designed for use in power management and industrial applications.

  • Package: 8-SO
  • Maximum Power Dissipation: 2.5W (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 7.6nC @ 5V
  • Rds On (Max): 22 mOhm @ 8.4A, 10V
  • Supply and Demand: Sufficient
  • Quantity per Package: 2,500 units

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Quantity Unit Price Ext. Price
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200+ $0.5814 $116.2800
310+ $0.5615 $174.0650
445+ $0.5214 $232.0230
580+ $0.5013 $290.7540
725+ $0.4812 $348.8700
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Availability: 7,000 pieces
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