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Same model may have multiple batches, images only for reference.
FDS6679 Real Image
Same model may have multiple batches, images only for reference.

FDS6679

Part No FDS6679
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 13A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 96nC @ 10V
Max Input Capacitance 3845pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 9.3 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 067088-FDS6679
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS6679 CAD Model

Description

The Fairchild/ON Semiconductor FDS6679 is a P-channel power MOSFET designed for use in power management and industrial applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 13A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge (Max): 96nC @ 10V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting: SMD (SMT)
  • Popularity: Medium
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
525+ $0.1103 $57.9075
1,280+ $0.0906 $115.9680
1,975+ $0.0878 $173.4050
2,725+ $0.0849 $231.3525
3,520+ $0.0822 $289.3440
4,710+ $0.0736 $346.6560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,900 pieces
MOQ: 525 pcs
Order Increment : 1 pcs
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