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FDS6680A

Part No FDS6680A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12.5A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 23nC @ 5V
Max Input Capacitance 1620pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 12.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 016164-FDS6680A
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS6680A CAD Model

Description

The FDS6680A is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor, widely used in power management and industrial applications.

  • Device Type: N-channel MOSFET
  • Mounting Style: Surface Mount
  • Maximum Power Dissipation: 2.5W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 12.5A
  • Maximum Gate Charge: 23nC
  • Maximum Input Capacitance: 1620pF
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6478 $51.8240
190+ $0.5315 $100.9850
295+ $0.5149 $151.8955
405+ $0.4983 $201.8115
520+ $0.4817 $250.4840
695+ $0.4319 $300.1705
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 78,750 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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