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FDS6690AS

Name: FDS6690AS
Brand: Fairchild/ON Semiconductor
SKU: 129877
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	FDS6690AS
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 10A 8SOIC
Datasheet	FDS6690AS Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	3V @ 1mA
Max Gate Charge	23nC @ 10V
Max Input Capacitance	910pF @ 15V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	2.5W (Ta)
Maximum Rds On at Id,Vgs	12 mOhm @ 10A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	016168-FDS6690AS
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Sufficient
Quantity per package	2,500
Ultra Librarian 3D Model	Ultra Librarian FDS6690AS CAD Model

Alternative Products

Description

The Fairchild/ON Semiconductor 016168-FDS6690AS is an N-Channel SMD (SMT) MOSFET transistor.

Drain-Source Breakdown Voltage: 30V
Continuous Drain Current: 10A (Ta) at 25°C
Gate-Source Threshold Voltage: 3V at 1mA
Maximum Gate Charge: 23nC at 10V
Maximum Input Capacitance: 910pF at 15V
Maximum Rds On: 12 mOhm @ 10A, 10V
Package: 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max): 2.5W (Ta)
Drive Voltage: 4.5V, 10V (Max Rds On, Min Rds On)
Quantity per Package: 2,500

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
80+	$0.7454	$59.6320
190+	$0.6117	$116.2230
295+	$0.5927	$174.8465
405+	$0.5735	$232.2675
525+	$0.5544	$291.0600
700+	$0.4970	$347.9000

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 19,809 pieces

MOQ: 80 pcs

Order Increment : 1 pcs

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