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Same model may have multiple batches, images only for reference.
FDS7079ZN3 Real Image
Same model may have multiple batches, images only for reference.

FDS7079ZN3

Part No FDS7079ZN3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 16A 8-SOIC
Datasheet
FDS7079ZN3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 55nC @ 5V
Max Input Capacitance 3630pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.13W (Ta)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 142986-FDS7079ZN3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDS7079ZN3 CAD Model

Description

The Fairchild/ON Semiconductor FDS7079ZN3 is a P-channel MOSFET transistor designed for discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 16A @ 25°C
  • Package: 8-SO
  • Power Dissipation (Max): 3.13W (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge (Max): 55nC @ 5V
  • Rds On (Max): 7.5 mOhm @ 16A, 10V
  • Supply and Demand: Limited
  • Package Quantity: 2,500 units

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