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Same model may have multiple batches, images only for reference.
FDS8333C Real Image
Same model may have multiple batches, images only for reference.

FDS8333C

Part No FDS8333C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N/P-CH 30V 4.1A/3.4A 8-Pin SOIC N T/R / MOSFET N/P-CH 30V 8SOIC
Datasheet
FDS8333C Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.1A, 3.4A
Maximum Rds On at Id,Vgs 80 mOhm @ 4.1A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 6.6nC @ 4.5V
Max Input Capacitance 282pF @ 10V
Maximum Power Dissipation 900mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 067105-FDS8333C
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Computers & Computer Peripherals
Family Name FDS8333C
Introduction Date August 09, 2002
ECCN EAR99
Country of Origin China, Malaysia, Philippines, Taiwan, Thailand
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FDS8333C CAD Model

Description

The FDS8333C is an N and P-channel logic level gate FET manufactured by Fairchild/ON Semiconductor.

  • Popularity: High
  • Supply and Demand: Balanced
  • Power Dissipation (Max): 900mW
  • Drain-Source Breakdown Voltage: 30V
  • Rds On (Id,Vgs): 80 mOhm @ 4.1A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3935 $59.0250
360+ $0.3229 $116.2440
555+ $0.3129 $173.6595
765+ $0.3028 $231.6420
990+ $0.2927 $289.7730
1,325+ $0.2624 $347.6800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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