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Same model may have multiple batches, images only for reference.
FDS8672S Real Image
Same model may have multiple batches, images only for reference.

FDS8672S

Part No FDS8672S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R / MOSFET N-CH 30V 18A 8-SOIC
Datasheet
FDS8672S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 2670pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 4.8 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 016193-FDS8672S
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Quantity per package 2,500
Family Name FDS8672S
Introduction Date July 28, 2006
ECCN EAR99
Country of Origin Thailand
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian FDS8672S CAD Model

Description

The Fairchild/ON Semiconductor FDS8672S is a N-Channel MOSFET with a drain-source breakdown voltage of 30V.

  • Continuous Drain Current: 18A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 1mA
  • Maximum Gate Charge: 41nC @ 10V
  • Maximum Input Capacitance: 2670pF @ 15V
  • Maximum Rds On: 4.8 mOhm @ 18A, 10V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Category: Discrete Semiconductor Products

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Quantity Unit Price Ext. Price
105+ $0.5518 $57.9390
260+ $0.4528 $117.7280
395+ $0.4387 $173.2865
545+ $0.4245 $231.3525
705+ $0.4104 $289.3320
945+ $0.3679 $347.6655
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Availability: 6,600 pieces
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